au.\*:("JEPPS NW")
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THE 6H->3C "REVERS" TRANSFORMATION IN SILICON CARBIDE COMPACTSJEPPS NW; PAGE TF.1981; J. AM. CERAM. SOC.; ISSN 0002-7820; USA; DA. 1981; VOL. 64; NO 12; PP. C177-C178; BIBL. 26 REF.Article
9R-HREM OBSERVATIONS OF A NEW SILICON CARBIDE POLYTYPEJEPPS NW; PAGE TF.1980; J. AM. CERAM. SOC.; ISSN 0002-7820; USA; DA. 1980; VOL. 63; NO 1-2; PP. 102-103; BIBL. 6 REF.Article
THE ETCHING BEHAVIOUR OF SILICON CARBIDE COMPACTSJEPPS NW; PAGE TF.1981; J. MICROSC. (OXF.); ISSN 0022-2720; GBR; DA. 1981; VOL. 124; NO 3; PP. 227-237; BIBL. 46 REF.Conference Paper
THE DIRECT IDENTIFICATION OF STACKING SEQUENCES IN SILICON CARBIDE POLYTYPES BY HIGH-RESOLUTION ELECTRON MICROSCOPYJEPPS NW; SMITH DJ; PAGE TF et al.1979; ACTA CRYSTALLOGR., SECT. A, CRYST. PHYS. DIFFR., THEOR. GEN. CRYSTALLOGR.; ISSN 0567-7394; DNK; DA. 1979; VOL. 35; NO 6; PP. 916-923; BIBL. 20 REF.Article
OBSERVATIONS OF SILICON CARBIDE BY HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPYSMITH D; JEPPS NW; PAGE TF et al.1978; J. MICR.; GBR; DA. 1978; VOL. 114; NO 1; PP. 1-18; BIBL. 2 P.Article
AN APPLICATION OF EELS IN THE EXAMINATION OF INCLUSIONS AND GRAIN BOUNDARIES OF A SIC CERAMICBOURDILLON AJ; JEPPS NW; STOBBS WM et al.1981; J. MICROSC. (OXF.); ISSN 0022-2720; GBR; DA. 1981; VOL. 124; NO 1; PP. 49-56; BIBL. 2 P.Conference Paper